Invention Grant
- Patent Title: Method of manufacturing semiconductor device using acid diffusion
- Patent Title (中): 使用酸扩散制造半导体器件的方法
-
Application No.: US13185897Application Date: 2011-07-19
-
Publication No.: US08623739B2Publication Date: 2014-01-07
- Inventor: Hyung-rae Lee , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
- Applicant: Hyung-rae Lee , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2010-0072484 20100727
- Main IPC: H01L21/76
- IPC: H01L21/76

Abstract:
A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.
Public/Granted literature
- US20120028434A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ACID DIFFUSION Public/Granted day:2012-02-02
Information query
IPC分类: