Invention Grant
- Patent Title: Homogeneous porous low dielectric constant materials
- Patent Title (中): 均质多孔低介电常数材料
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Application No.: US13553264Application Date: 2012-07-19
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Publication No.: US08623741B2Publication Date: 2014-01-07
- Inventor: Sampath Purushothaman , Geraud Jean-Michel Dubois , Teddie P. Magbitang , Willi Volksen , Theo J. Frot
- Applicant: Sampath Purushothaman , Geraud Jean-Michel Dubois , Teddie P. Magbitang , Willi Volksen , Theo J. Frot
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/31
Abstract:
In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.
Public/Granted literature
- US20120282784A1 HOMOGENEOUS POROUS LOW DIELECTRIC CONSTANT MATERIALS Public/Granted day:2012-11-08
Information query
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