Invention Grant
- Patent Title: Through-hole electrode substrate and method of manufacturing the same
- Patent Title (中): 通孔电极基板及其制造方法
-
Application No.: US13466514Application Date: 2012-05-08
-
Publication No.: US08623751B2Publication Date: 2014-01-07
- Inventor: Koichi Nakayama , Yoichi Hitomi , Takamasa Takano
- Applicant: Koichi Nakayama , Yoichi Hitomi , Takamasa Takano
- Applicant Address: JP Tokyo
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2008-332243 20081226; JP2009-233412 20091007
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
A through-hole electrode substrate related to an embodiment of the present invention is arranged with a semiconductor substrate having a plurality of through-holes, an insulating layer formed with an insulating material on the inner walls of the plurality of through-holes and on at least one surface of the semiconductor substrate, a plurality of through-hole electrodes formed with a metal material inside the through-hole, and a plurality of gas discharge parts formed to contact with each of the plurality of through-hole electrodes which is exposed on at least one surface of the semiconductor substrate, the plurality of gas discharge parts externally discharges gas which is discharged from the inside of the plurality of through-hole electrodes.
Public/Granted literature
- US20120220123A1 THROUGH-HOLE ELECTRODE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-08-30
Information query
IPC分类: