Invention Grant
- Patent Title: Semiconductor device and a method for making the semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US12621322Application Date: 2009-11-18
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Publication No.: US08623762B2Publication Date: 2014-01-07
- Inventor: Jochen Kraft , Franz Schrank
- Applicant: Jochen Kraft , Franz Schrank
- Applicant Address: AT Unterpremstaetten
- Assignee: AMS AG
- Current Assignee: AMS AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: DE102008058001 20081119
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
An opening (9) is made in the substrate (1) over a terminal pad (7). A dielectric layer (10), a metallization (11), a compensation layer (13) and a passivation layer (15) are deposited so that the passivation layer is separated from the metallization by the compensation layer at least within the opening. A material that is suitable for reducing a mechanical stress between the metallization and the passivation layer is chosen for the compensation layer.
Public/Granted literature
- US20100123254A1 Semiconductor Device and a Method for Making the Semiconductor Device Public/Granted day:2010-05-20
Information query
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