A method for fabricating a micropattern of a semiconductor device is provided. The method includes forming a first hard mask over an etch target layer, forming a first sacrificial layer over the first hard mask, etching the first sacrificial layer to form a sacrificial pattern and forming spacers on both sidewalls of the sacrificial pattern, A second sacrificial layer is formed over the spacers and the first hard mask. A dummy mask is formed in a bent portion of the second sacrificial layer between the adjacent spacers. The sacrificial pattern and the second sacrificial layer are etched using the dummy mask and the spacers as an etch barrier layer to form a dummy pattern between the adjacent spacers. The first hard mask is etched using the spacers and the dummy pattern as an etch barrier layer to form a first hard mask pattern.