Invention Grant
- Patent Title: Heterojunction III-V solar cell performance
- Patent Title (中): 异质结III-V太阳能电池性能
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Application No.: US13179731Application Date: 2011-07-11
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Publication No.: US08624104B2Publication Date: 2014-01-07
- Inventor: Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant: Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Louis J. Percello
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00
Abstract:
An InxGa1-xAs interlayer is provided between a III-V base and an intrinsic amorphous semiconductor layer of a heterojunction III-V solar cell structure. Improved surface passivation and open circuit voltage may be obtained through the incorporation of the interlayer within the structure.
Public/Granted literature
- US20130014811A1 HETEROJUNCTION III-V SOLAR CELL PERFORMANCE Public/Granted day:2013-01-17
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