Invention Grant
- Patent Title: Semiconductor device having a resistance variable element and a manufacturing method thereof
- Patent Title (中): 具有电阻可变元件的半导体器件及其制造方法
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Application No.: US12866359Application Date: 2009-06-08
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Publication No.: US08624214B2Publication Date: 2014-01-07
- Inventor: Takumi Mikawa , Kazuhiko Shimakawa
- Applicant: Takumi Mikawa , Kazuhiko Shimakawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery, LLP
- Priority: JP2008-151320 20080610
- International Application: PCT/JP2009/002570 WO 20090608
- International Announcement: WO2009/150814 WO 20091217
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L47/00 ; H01L21/00
Abstract:
A semiconductor device (100) of the present invention has a structure in which an interlayer insulating layer (115) is formed on an uppermost wire (114), contacts (116, 117) penetrate the interlayer insulating layer (115), a lower electrode (118a) of the resistance variable element is formed on the interlayer insulating layer (115) to cover the contact (116), and resistance variable layer (119) is formed on the interlayer insulating layer (115) to cover the lower electrode (118a) and the contact (117). The contact (116) and the lower electrode (118a) serve as a first terminal, while the contact (117) serves as a second terminal.
Public/Granted literature
- US20100321095A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND SYSTEM Public/Granted day:2010-12-23
Information query
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