Invention Grant
US08624219B1 Variable impedance memory element structures, methods of manufacture, and memory devices containing the same
失效
可变阻抗存储元件结构，制造方法和包含该可变阻抗存储元件结构的存储器件
- Patent Title: Variable impedance memory element structures, methods of manufacture, and memory devices containing the same
- Patent Title (中): 可变阻抗存储元件结构，制造方法和包含该可变阻抗存储元件结构的存储器件
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Application No.: US13445389Application Date: 2012-04-12
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Publication No.: US08624219B1Publication Date: 2014-01-07
- Inventor: John Ross Jameson , Antonio R. Gallo , Foroozan Sarah Koushan , Michael A. Van Buskirk
- Applicant: John Ross Jameson , Antonio R. Gallo , Foroozan Sarah Koushan , Michael A. Van Buskirk
- Applicant Address: US CA Sunnyvale
- Assignee: Adesto Technologies Corporation
- Current Assignee: Adesto Technologies Corporation
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A memory device can include at least one cathode formed in first opening of a first insulating layer; at least one anode formed in a second opening of second insulating layer, the second insulating layer being a different vertical layer than the first insulating layer; and a memory layer comprising an ion conductor layer extending laterally between the at least one anode and cathode on the first insulating layer, the ion conductor layer having a thickness in the vertical direction less than a depth of the first opening.
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