Invention Grant
- Patent Title: Homogeneous multiple band gap devices
- Patent Title (中): 均质多带隙器件
-
Application No.: US13656565Application Date: 2012-10-19
-
Publication No.: US08624222B2Publication Date: 2014-01-07
- Inventor: Feng Liu , Ye Zhang , Rujie Sun
- Applicant: University of Utah Research Foundation
- Applicant Address: US UT Salt Lake City
- Assignee: University of Utah Research Foundation
- Current Assignee: University of Utah Research Foundation
- Current Assignee Address: US UT Salt Lake City
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L27/142
- IPC: H01L27/142

Abstract:
An electrical device comprising (A) a substrate having a surface and (B) a nanohole superlattice superimposed on a portion of the surface is provided. The nanohole superlattice comprises a plurality of sheets having an array of holes defined therein. The array of holes is characterized by a band gap or band gap range. The plurality of sheets forms a first edge and a second edge. A first lead comprising a first electrically conductive material forms a first junction with the first edge. A second lead comprising a second electrically conductive material forms a second junction with the second edge. The first junction is a Schottky barrier with respect to a carrier. In some instances a metal protective coating covers all or a portion of a surface of the first lead. In some instances, the first lead comprises titanium, the second lead comprises palladium, and the metal protective coating comprises gold.
Public/Granted literature
- US20130099205A1 HOMOGENEOUS MULTIPLE BAND GAP DEVICES Public/Granted day:2013-04-25
Information query
IPC分类: