Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13711169Application Date: 2012-12-11
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Publication No.: US08624242B2Publication Date: 2014-01-07
- Inventor: Hiroshi Kojima , Fumio Marutani
- Applicant: Hiroshi Kojima , Fumio Marutani
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Morrison & Foerster LLP
- Priority: JP2011-271806 20111213
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
There is offered a semiconductor integrated circuit provided with a function to electrically identify a location where a defect such as chipping of an LSI die or separation of resin is caused. Corresponding to each of the four corners of a semiconductor substrate, each of L-shaped first through fourth peripheral wirings having a first end and a second end is disposed on a periphery of the semiconductor substrate. The first end of each of the first through fourth peripheral wirings is connected with a power supply wiring. Each of first through fourth detection circuits detects breaking of corresponding each of the first through fourth peripheral wirings in response to a voltage at the second end of corresponding each of the first through fourth peripheral wirings, and outputs corresponding each of first through fourth detection signals to corresponding each of output pads.
Public/Granted literature
- US20130146874A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2013-06-13
Information query
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