Invention Grant
US08624244B2 Thin film transistor including a light-transmitting semiconductor film and active matrix substrate 有权
薄膜晶体管包括透光半导体膜和有源矩阵基板

Thin film transistor including a light-transmitting semiconductor film and active matrix substrate
Abstract:
A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
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