Invention Grant
- Patent Title: Thin film transistor including a light-transmitting semiconductor film and active matrix substrate
- Patent Title (中): 薄膜晶体管包括透光半导体膜和有源矩阵基板
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Application No.: US13346193Application Date: 2012-01-09
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Publication No.: US08624244B2Publication Date: 2014-01-07
- Inventor: Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
- Applicant: Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-010440 20110121
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/036 ; H01L31/0376 ; H01L31/20 ; H01L29/12 ; H01L29/76 ; H01L31/112 ; H01L29/15

Abstract:
A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
Public/Granted literature
- US20120187393A1 THIN FILM TRANSISTOR, ACTIVE MATRIX SUBSTRATE, AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-07-26
Information query
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