Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13600066Application Date: 2012-08-30
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Publication No.: US08624286B2Publication Date: 2014-01-07
- Inventor: Atsushi Takeshita
- Applicant: Atsushi Takeshita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2012-062636 20120319
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
According to an embodiment, a semiconductor device including a first body molded with a first resin, a second body molded with the first resin, and a third body molded with a second resin. The first body includes a first light emitting element, a primary lead, a first light receiving element, and a secondary lead. The second body includes a second light emitting element, a primary lead, a second light receiving element, and a secondary lead. The third body includes the first body and the second body. At least one common lead includes the primary leads or the secondary leads, and a portion extending between the first body and the second body, the portion being covered with a first thin film linked to the first body and a second thin film linked to the second body.
Public/Granted literature
- US20130240913A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-09-19
Information query
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