Invention Grant
- Patent Title: Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
- Patent Title (中): 固态成像装置，制造固态成像装置的方法和电子装置
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Application No.: US13249825Application Date: 2011-09-30
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Publication No.: US08624306B2Publication Date: 2014-01-07
- Inventor: Takayuki Enomoto , Hideaki Togashi
- Applicant: Takayuki Enomoto , Hideaki Togashi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2010-227757 20101007
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
A solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.
Public/Granted literature
- US20120086845A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS Public/Granted day:2012-04-12
Information query
IPC分类:
