Invention Grant
US08624308B2 Image sensor five transistor pixel element with four control signals
有权
图像传感器五个晶体管像素元件具有四个控制信号
- Patent Title: Image sensor five transistor pixel element with four control signals
- Patent Title (中): 图像传感器五个晶体管像素元件具有四个控制信号
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Application No.: US12032966Application Date: 2008-02-18
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Publication No.: US08624308B2Publication Date: 2014-01-07
- Inventor: Hiromichi Oshikubo , Satoru Adachi
- Applicant: Hiromichi Oshikubo , Satoru Adachi
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Lawrence J. Bassuk; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Priority: JP2007-036978 20070216
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
The invention provides a solid-state image pickup device and method for realizing a higher sensitivity and a higher S/N ratio especially in the low-luminance region while maintaining a wide dynamic range. Plural pixels are integrated in an array configuration on a semiconductor substrate with each pixel having photodiode PD, which receives light and generates and stores photoelectric charge, transfer transistor Tr1, which transfers such photoelectric charge from such photodiode, floating diffusion FD, which transfers such photoelectric charge through such transfer transistor, additive capacitive element Cs, which is set connected via the floating diffusion to the photodiode, capacitive coupling transistor Tr2, which combines or divides the capacitance of such floating diffusion and the capacitance of such additive capacitive element, and reset transistor Tr3, which is connected to such additive capacitive element or floating diffusion; and the capacitance of the floating diffusion is smaller than that of the photodiode.
Public/Granted literature
- US20080210993A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD Public/Granted day:2008-09-04
Information query
IPC分类: