Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US13059092Application Date: 2010-06-23
-
Publication No.: US08624325B2Publication Date: 2014-01-07
- Inventor: Wang Wenwu , Shijie Chen , Xiaolei Wang , Kai Han , Dapeng Chen
- Applicant: Wang Wenwu , Shijie Chen , Xiaolei Wang , Kai Han , Dapeng Chen
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Troutman Sanders LLP
- Priority: CN200910237546 20091111
- International Application: PCT/CN2010/074300 WO 20100623
- International Announcement: WO2011/057492 WO 20110519
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
The present invention provides a semiconductor device, comprising: a semiconductor substrate having a first region and a second region; a first gate structure belong to a PMOS device on the first region; a second gate structure belong to an nMOS device on the second region; a multiple-layer first sidewall spacer on sidewalls of the first gate structure, wherein a layer of the multiple-layer first sidewall spacer adjacent to the first gat structure is an oxide layer; a multiple-layer second sidewall spacer on sidewalls of the second gate structure, wherein a layer of the multiple layers of second sidewall spacer adjacent to the first gat structure is a nitride layer. Application of the present invention may alleviate the oxygen vacancy in a high-k gate dielectric in a pMOS device, and further avoid the problem of EOT growth of an nMOS device during the high-temperature thermal treatment process, and therefore effectively improve the overall performance of the high-k gate dielectric CMOS device.
Public/Granted literature
- US20120012939A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-01-19
Information query
IPC分类: