Invention Grant
US08624327B2 Integrated semiconductor structure for SRAM and fabrication methods thereof
有权
用于SRAM的集成半导体结构及其制造方法
- Patent Title: Integrated semiconductor structure for SRAM and fabrication methods thereof
- Patent Title (中): 用于SRAM的集成半导体结构及其制造方法
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Application No.: US13710377Application Date: 2012-12-10
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Publication No.: US08624327B2Publication Date: 2014-01-07
- Inventor: Sheng Chiang Hung , Huai-Ying Huang , Ping-Wei Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A SRAM device with metal gate transistors is provided. The SRAM device includes a PMOS structure and an NMOS structure over a substrate. Each of the PMOS and the NMOS structure includes a p-type metallic work function layer and an n-type metallic work function layer. The p-type work metallic function layer and the n-type metallic work function layer form a combined work function for the PMOS and the NMOS structures.
Public/Granted literature
- US20130146987A1 Integrated Semiconductor Structure for SRAM and Fabrication Methods Thereof Public/Granted day:2013-06-13
Information query
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