Invention Grant
US08624330B2 Thin film transistors and high fill factor pixel circuits and methods for forming same
有权
薄膜晶体管和高填充因子像素电路及其形成方法
- Patent Title: Thin film transistors and high fill factor pixel circuits and methods for forming same
- Patent Title (中): 薄膜晶体管和高填充因子像素电路及其形成方法
-
Application No.: US12324207Application Date: 2008-11-26
-
Publication No.: US08624330B2Publication Date: 2014-01-07
- Inventor: Jurgen H. Daniel , Ana Claudia Arias
- Applicant: Jurgen H. Daniel , Ana Claudia Arias
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Fay Sharpe LLP
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
A method and structures to achieve improved TFTs and high fill-factor pixel circuits are provided. This system relies on the fact that jet-printed lines have print accuracy, which means the location and the definition of the printed lines and dots is high. The edge of a printed line is well defined if the printing conditions are optimized. This technique utilizes the accurate definition and placement of the edges of printed lines of conductors and insulators to define small features and improved structures.
Public/Granted literature
- US20100127268A1 THIN FILM TRANSISTORS AND HIGH FILL FACTOR PIXEL CIRCUITS AND METHODS FOR FORMING SAME Public/Granted day:2010-05-27
Information query
IPC分类: