Invention Grant
- Patent Title: Multi-nanometer-projection apparatus for lithography, oxidation, inspection, and measurement
- Patent Title (中): 用于光刻，氧化，检查和测量的多纳米投影设备
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Application No.: US13101443Application Date: 2011-05-05
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Publication No.: US08624338B2Publication Date: 2014-01-07
- Inventor: Fei-Gwo Tsai , Chwen Yu
- Applicant: Fei-Gwo Tsai , Chwen Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
An apparatus, method for manufacturing the apparatus, and method for processing a substrate using the apparatus are disclosed. An exemplary apparatus includes a substrate having a plurality of cells, wherein each cell includes a cell structure. The cell structure includes a piezoelectric film portion and a tip disposed over the piezoelectric film portion. The tip is physically coupled with the piezoelectric film portion.
Public/Granted literature
- US20120280333A1 MULTI-NANOMETER-PROJECTION APPARATUS FOR LITHOGRAPHY, OXIDATION, INSPECTION, AND MEASUREMENT Public/Granted day:2012-11-08
Information query
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