Invention Grant
- Patent Title: Solid state imaging device and method for manufacturing the same
- Patent Title (中): 固态成像装置及其制造方法
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Application No.: US13017467Application Date: 2011-01-31
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Publication No.: US08624344B2Publication Date: 2014-01-07
- Inventor: Yusuke Arayashiki , Kazuaki Nakajima
- Applicant: Yusuke Arayashiki , Kazuaki Nakajima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-020999 20100202
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/0232
Abstract:
A solid state imaging device according to an embodiment includes a light sensing part which conducts photoelectric conversion on incident light. The solid state imaging device includes a ferroelectric layer including an organic compound on a surface of the light sensing part on which light is incident. The solid state imaging device includes a transparent electrode formed on the ferroelectric layer.
Public/Granted literature
- US20110187912A1 SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-08-04
Information query
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