Invention Grant
US08624345B2 Photomask and photomask substrate with reduced light scattering properties
有权
光掩模和光掩模底物,具有降低的光散射性能
- Patent Title: Photomask and photomask substrate with reduced light scattering properties
- Patent Title (中): 光掩模和光掩模底物,具有降低的光散射性能
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Application No.: US13486995Application Date: 2012-06-01
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Publication No.: US08624345B2Publication Date: 2014-01-07
- Inventor: Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
- Applicant: Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L33/44
- IPC: H01L33/44 ; G03F1/46 ; G03F1/58 ; G03F1/68

Abstract:
A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.
Public/Granted literature
- US20120237861A1 PHOTOMASK AND PHOTOMASK SUBSTRATE WITH REDUCED LIGHT SCATTERING PROPERTIES Public/Granted day:2012-09-20
Information query
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