Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13526118Application Date: 2012-06-18
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Publication No.: US08624355B2Publication Date: 2014-01-07
- Inventor: Koji Shirai
- Applicant: Koji Shirai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A semiconductor device includes an n-type first guard ring layer provided between an emitter layer and a collector layer on a surface side of a base layer, and having a higher n-type impurity concentration than the base layer, and an n-type second guard ring layer provided between the first guard ring layer and a buried layer, connected to the first guard ring layer and the buried layer, and having a higher n-type impurity concentration than the base layer. The first guard ring layer has an n-type impurity concentration profile decreasing toward the second guard ring layer side, and the second guard ring layer has an impurity concentration profile decreasing toward the first guard ring layer side.
Public/Granted literature
- US20130187256A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-07-25
Information query
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