Invention Grant
US08624356B2 Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate
有权
III族氮化物半导体衬底制造方法和III族氮化物半导体衬底
- Patent Title: Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate
- Patent Title (中): III族氮化物半导体衬底制造方法和III族氮化物半导体衬底
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Application No.: US12413992Application Date: 2009-03-30
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Publication No.: US08624356B2Publication Date: 2014-01-07
- Inventor: Yuichi Oshima
- Applicant: Yuichi Oshima
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2008-307377 20081202
- Main IPC: H01L29/22
- IPC: H01L29/22
Abstract:
A group III nitride semiconductor substrate production method includes preparing a bulk crystal formed of a group III nitride semiconductor single crystal. The group III nitride semiconductor single crystal has one crystalline plane and an other crystalline plane. Hardness of the other crystalline plane is smaller than hardness of the one crystalline plane. The prepared bulk crystal is cut from the other crystalline plane to the one crystalline plane of the bulk crystal.
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