Invention Grant
- Patent Title: Cooling channels in 3DIC stacks
- Patent Title (中): 3DIC堆栈中的冷却通道
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Application No.: US12616562Application Date: 2009-11-11
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Publication No.: US08624360B2Publication Date: 2014-01-07
- Inventor: Kai-Ming Ching , Ching-Wen Hsiao , Tsung-Ding Wang , Ming-Hong Tseng , Chen-Shien Chen
- Applicant: Kai-Ming Ching , Ching-Wen Hsiao , Tsung-Ding Wang , Ming-Hong Tseng , Chen-Shien Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/02 ; H01L23/34 ; H01L23/48 ; H01L23/52

Abstract:
An integrated circuit structure includes a die including a semiconductor substrate; dielectric layers over the semiconductor substrate; an interconnect structure including metal lines and vias in the dielectric layers; a plurality of channels extending from inside the semiconductor substrate to inside the dielectric layers; and a dielectric film over the interconnect structure and sealing portions of the plurality of channels. The plurality of channels is configured to allow a fluid to flow through.
Public/Granted literature
- US20100117201A1 Cooling Channels in 3DIC Stacks Public/Granted day:2010-05-13
Information query
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