Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13610935Application Date: 2012-09-12
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Publication No.: US08624379B2Publication Date: 2014-01-07
- Inventor: Hiroyuki Nakamura , Yukihiro Sato , Atsushi Fujiki , Tatsuhiro Seki
- Applicant: Hiroyuki Nakamura , Yukihiro Sato , Atsushi Fujiki , Tatsuhiro Seki
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-214474 20110929
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.
Public/Granted literature
- US20130082334A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-04-04
Information query
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