Invention Grant
- Patent Title: Polarized xenon gas concentration method, polarized xenon gas manufacturing supply device, and MRI system
- Patent Title (中): 极化氙气浓度法,极化氙气制造供应装置和MRI系统
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Application No.: US13055246Application Date: 2009-07-29
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Publication No.: US08624594B2Publication Date: 2014-01-07
- Inventor: Hideaki Fujiwara , Hirohiko Imai , Satoshi Iguchi , Hironobu Yoshimura , Atsuomi Kimura
- Applicant: Hideaki Fujiwara , Hirohiko Imai , Satoshi Iguchi , Hironobu Yoshimura , Atsuomi Kimura
- Applicant Address: JP Osaka
- Assignee: Osaka University
- Current Assignee: Osaka University
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2008-199302 20080801
- International Application: PCT/JP2009/063482 WO 20090729
- International Announcement: WO2010/013743 WO 20100204
- Main IPC: G01V3/00
- IPC: G01V3/00

Abstract:
The present invention relates to a polarized xenon gas manufacturing supply device that is provided with a polarization cell 6 that produces a polarized xenon gas by polarizing a mixture of xenon gas and a diluent gas that consists primarily of a high-boiling-point gas that has a boiling point higher than that of the xenon gas, and a condenser (9) that cools the mixed gas discharged from the polarization cell (6) and condenses and separates the high-boiling-point gas by using the difference in boiling points between the xenon gas and the high-boiling-point gas, wherein the supply device is constructed so as to re-vaporize the condensed liquid of the high-boiling-point gas produced by the condenser (9) and introduce it to the polarization cell (6). This polarized xenon gas manufacturing supply device makes it possible to continuously manufacture and supply highly polarized and highly concentrated xenon gas.
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