Invention Grant
- Patent Title: Burn-in method for surface emitting semiconductor laser device
- Patent Title (中): 表面发射半导体激光器件的老化方法
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Application No.: US12605414Application Date: 2009-10-26
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Publication No.: US08624614B2Publication Date: 2014-01-07
- Inventor: Seiya Omori
- Applicant: Seiya Omori
- Applicant Address: JP Tokyo
- Assignee: Fuji Xerox Co., Ltd.
- Current Assignee: Fuji Xerox Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Fildes & Outland, P.C.
- Priority: JP2009-103549 20090422
- Main IPC: G01R31/10
- IPC: G01R31/10
Abstract:
A burn-in method includes applying a stress current for applying thermal stress to a surface-emitting semiconductor laser, measuring an operation characteristic of the surface-emitting semiconductor laser to which the stress current is applied, and making a pass/fail decision on the surface-emitting semiconductor laser on the basis of the operation characteristic measured.
Public/Granted literature
- US20100273278A1 BURN-IN METHOD FOR SURFACE EMITTING SEMICONDUCTOR LASER DEVICE Public/Granted day:2010-10-28
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