Invention Grant
- Patent Title: Isolation circuit
- Patent Title (中): 隔离电路
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Application No.: US13211022Application Date: 2011-08-16
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Publication No.: US08624615B2Publication Date: 2014-01-07
- Inventor: Hani S. Attalla , Daniel P. Cram
- Applicant: Hani S. Attalla , Daniel P. Cram
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G01R31/3187
- IPC: G01R31/3187

Abstract:
The present disclosure includes various method, device, and system embodiments for isolation circuits. One such isolation circuit embodiment includes: a first transistor configured for connection to a supply voltage via a first terminal; a register connected to the first transistor; a second transistor in parallel with a resistor, wherein the second transistor is configured for connection to the first terminal, with a gate of the second transistor configured for connection to an output of the register; and wherein the second transistor is configured for connection to a second terminal, the second transistor having a state that depends on a status of the register.
Public/Granted literature
- US20120001680A1 ISOLATION CIRCUIT Public/Granted day:2012-01-05
Information query
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