Invention Grant
- Patent Title: Switching control circuit for thermal protection of transistors
- Patent Title (中): 晶体管热保护开关控制电路
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Application No.: US13369092Application Date: 2012-02-08
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Publication No.: US08624637B2Publication Date: 2014-01-07
- Inventor: Michael Asam , Carmelo Fabio Giunta , Wolfgang Horchler , Markus Winkler
- Applicant: Michael Asam , Carmelo Fabio Giunta , Wolfgang Horchler , Markus Winkler
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K17/687

Abstract:
A circuit for controlling the switching operation of a transistor is described. A gate driver circuit is operably connected to a control electrode of the transistor and is configured to charge and discharge the control electrode to switch the transistor on and off, respectively, in accordance with a control signal. The charging and discharging of the control electrode is done such that the corresponding transitions in the load current and the output voltage are smooth with a defined slope. A controllable switch is connected to the control electrode such that, when the switch closes, the control electrode is quickly discharged via the switch thus quickly switching off the transistor. A control logic circuit is configured to close the controllable switch for switching off the transistor when at least one of a number of conditions holds true.
Public/Granted literature
- US20130200927A1 Over-Temperature Protected Transistor Public/Granted day:2013-08-08
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