Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12972623Application Date: 2010-12-20
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Publication No.: US08624650B2Publication Date: 2014-01-07
- Inventor: Masato Ishii
- Applicant: Masato Ishii
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-291587 20091223
- Main IPC: H03K3/289
- IPC: H03K3/289

Abstract:
An object is to provide a low-power semiconductor device which does not require a latch circuit to hold data at the output of inverter circuits. In the semiconductor device, an input of a first inverter circuit is connected to an input terminal through a source and a drain of a first transistor. An input of a second inverter circuit is connected to an output of the first inverter circuit through a source and a drain of a second transistor. An output of the second inverter is connected to an output terminal. An inverted clock signal and a clock signal are input to gates of the first transistor and the second transistor, respectively. The first and the second transistor have extremely low off-current, which allows the output potential of the device to remain unchanged even when the input varies.
Public/Granted literature
- US20110148497A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-06-23
Information query
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