Invention Grant
- Patent Title: Method of operating semiconductor device
- Patent Title (中): 操作半导体器件的方法
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Application No.: US12462176Application Date: 2009-07-30
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Publication No.: US08624665B2Publication Date: 2014-01-07
- Inventor: Sang-moo Choi , Won-joo Kim , Tae-hee Lee , Dae-kil Cha
- Applicant: Sang-moo Choi , Won-joo Kim , Tae-hee Lee , Dae-kil Cha
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2008-0103201 20081021
- Main IPC: H03K3/01
- IPC: H03K3/01
Abstract:
Provided is a method of operating a semiconductor device, wherein an operating mode is set by adjusting timing of a voltage pulse or by adjusting a voltage level of the voltage pulse.
Public/Granted literature
- US20100097124A1 Method of operating semiconductor device Public/Granted day:2010-04-22
Information query
