Invention Grant
- Patent Title: High electron mobility transistors with multiple channels
- Patent Title (中): 具有多个通道的高电子迁移率晶体管
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Application No.: US13567749Application Date: 2012-08-06
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Publication No.: US08624667B2Publication Date: 2014-01-07
- Inventor: Koon Hoo Teo , Peijie Feng , Chunjie Duan , Toshiyuki Oishi , Nakayama Masatoshi
- Applicant: Koon Hoo Teo , Peijie Feng , Chunjie Duan , Toshiyuki Oishi , Nakayama Masatoshi
- Applicant Address: US MA Cambridge
- Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee Address: US MA Cambridge
- Agent Dirk Brinkman; Gene Vinokur
- Main IPC: H01L25/00
- IPC: H01L25/00

Abstract:
A device includes a source for transmitting an electronic charge through a conduction path; a drain for receiving the electronic charge; a stack for providing at least part of the conduction path; and a gate operatively connected to the stack for controlling a conduction of the electronic charge. The stack includes an insulator layer, an N-polar layer and a barrier layer selected such that, during an operation of the device, the conduction path formed in the N-polar layer includes a two-dimensional electron gas (2DEG) channel and an inversion carrier channel.
Public/Granted literature
- US20130141156A1 High Electron Mobility Transistors with Multiple Channels Public/Granted day:2013-06-06
Information query
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