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US08624667B2 High electron mobility transistors with multiple channels 有权
具有多个通道的高电子迁移率晶体管

High electron mobility transistors with multiple channels
Abstract:
A device includes a source for transmitting an electronic charge through a conduction path; a drain for receiving the electronic charge; a stack for providing at least part of the conduction path; and a gate operatively connected to the stack for controlling a conduction of the electronic charge. The stack includes an insulator layer, an N-polar layer and a barrier layer selected such that, during an operation of the device, the conduction path formed in the N-polar layer includes a two-dimensional electron gas (2DEG) channel and an inversion carrier channel.
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