Invention Grant
US08624675B2 Method and system for providing automatic gate bias and bias sequencing for field effect transistors
有权
为场效应晶体管提供自动门偏置和偏置排序的方法和系统
- Patent Title: Method and system for providing automatic gate bias and bias sequencing for field effect transistors
- Patent Title (中): 为场效应晶体管提供自动门偏置和偏置排序的方法和系统
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Application No.: US13481906Application Date: 2012-05-28
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Publication No.: US08624675B2Publication Date: 2014-01-07
- Inventor: Lloyd Lautzenhiser
- Applicant: Lloyd Lautzenhiser
- Agency: Valenti, Hanley & Robinson, PLLC
- Agent Kevin T. Duncan
- Main IPC: H03G3/10
- IPC: H03G3/10

Abstract:
A feedback gate bias circuit for use in radio frequency amplifiers to more effectively control operation of LDFET, GaNFET, GaAsFET, and JFET type transistors used in such circuits. A transistor gate bias circuit that senses drain current and automatically adjusts or biases the gate voltage to maintain drain current independently of temperature, time, input drive, frequency, as well as from device to device variations. Additional circuits to provide temperature compensation, RF power monitoring and drain current control, RF output power leveler, high power gain block, and optional digital control of various functions. A gate bias circuit including a bias sequencer and negative voltage deriver for operation of N-channel depletion mode devices.
Public/Granted literature
- US20120313709A1 METHOD AND SYSTEM FOR PROVIDING AUTOMATIC GATE BIAS AND BIAS SEQUENCING FOR FIELD EFFECT TRANSISTORS Public/Granted day:2012-12-13
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