Invention Grant
- Patent Title: Low noise CMOS ring oscillator
- Patent Title (中): 低噪声CMOS环形振荡器
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Application No.: US13212771Application Date: 2011-08-18
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Publication No.: US08624681B2Publication Date: 2014-01-07
- Inventor: Zhendong Guo , Jun Ming
- Applicant: Zhendong Guo , Jun Ming
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: H03K3/03
- IPC: H03K3/03

Abstract:
Disclosed is an inverter cell design comprising first and second transistors and first and second resistors. In disclosed embodiments, the first resistor is connected to a source of the first transistor and the second resistor is connected to a source of the second transistor. The first and second resistors are configured for connection to respective first and second voltage potentials. The inverter cells may be configured in a ring oscillator. A crystal oscillator may comprise an inverter cell according to the present disclosure.
Public/Granted literature
- US20120049964A1 LOW NOISE CMOS RING OSCILLATOR Public/Granted day:2012-03-01
Information query
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