Invention Grant
- Patent Title: Semiconductor ceramic element and method for producing same
- Patent Title (中): 半导体陶瓷元件及其制造方法
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Application No.: US13794852Application Date: 2013-03-12
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Publication No.: US08624703B2Publication Date: 2014-01-07
- Inventor: Tadamasa Miura
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2010-205099 20100914
- Main IPC: H01C7/10
- IPC: H01C7/10

Abstract:
A semiconductor ceramic element includes an element main body where a PTC section including a semiconductor ceramic which has PTC characteristics and an NTC section including a semiconductor ceramic which has NTC characteristics are integrated by co-firing while suppressing interdiffusion. The element main body is formed in such a way that a PTC substrate is first obtained by firing a semiconductor ceramic material to serve as the PTC section at a predetermined temperature, and a paste containing a semiconductor ceramic material to serve as the NTC section is then applied or printed on the PTC substrate, followed by co-firing at a temperature lower than the predetermined temperature.
Public/Granted literature
- US20130200989A1 SEMICONDUCTOR CERAMIC ELEMENT AND METHOD FOR PRODUCING SAME Public/Granted day:2013-08-08
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