Invention Grant
- Patent Title: Semiconductor optical amplifier
- Patent Title (中): 半导体光放大器
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Application No.: US13472029Application Date: 2012-05-15
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Publication No.: US08625194B2Publication Date: 2014-01-07
- Inventor: Hideaki Hasegawa
- Applicant: Hideaki Hasegawa
- Applicant Address: JP Tokyo
- Assignee: Furukawa Electric Co., Ltd.
- Current Assignee: Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-262304 20091117
- Main IPC: H01S5/10
- IPC: H01S5/10 ; H01S5/50 ; H01S5/323 ; H01S5/343

Abstract:
A semiconductor optical amplifier includes an input-side optical amplifier waveguide section that has a first active core layer. An output-side optical amplifier waveguide section connects to the input-side optical amplifier waveguide section and has a second active core layer that is wider than the first active core layer. The width of the first active core layer and relative refractive index difference between the first active core layer and adjacent clad section in the width direction of the first active core layer, and the width of the second active core layer and relative refractive index difference between the second active core layer and adjacent clad section in the width direction of the second active core layer are set such that the carrier density and optical confinement factor in the first active core layer are higher than the carrier density and optical confinement factor in the second active core layer.
Public/Granted literature
- US20120243074A1 SEMICONDUCTOR OPTICAL AMPLIFIER Public/Granted day:2012-09-27
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