Invention Grant
- Patent Title: Memory module having high data processing rate
- Patent Title (中): 内存模块具有较高的数据处理速率
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Application No.: US13453333Application Date: 2012-04-23
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Publication No.: US08625323B2Publication Date: 2014-01-07
- Inventor: Gwang-Man Lim
- Applicant: Gwang-Man Lim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR2007-10575 20070201
- Main IPC: G11C13/04
- IPC: G11C13/04 ; G01J1/32

Abstract:
A memory module having a high data processing rate and high capacity is provided. The memory module may include a memory chip, a controller controlling an operation of the memory chip, an optical detector converting an external input signal into an internal input signal to transmit the converted signal to the controller, and an optical generator converting an internal output signal received from the controller into an external output signal. The optical detector converts an external input optical signal into an internal input signal to transmit the converted signal to the controller. The optical generator converts an internal output signal received from the controller into an external output optical signal.
Public/Granted literature
- US20120206955A1 MEMORY MODULE HAVING HIGH DATA PROCESSING RATE Public/Granted day:2012-08-16
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