Invention Grant
US08625327B2 Magnetic random access memory and initializing method for the same
有权
磁性随机存取存储器和初始化方法相同
- Patent Title: Magnetic random access memory and initializing method for the same
- Patent Title (中): 磁性随机存取存储器和初始化方法相同
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Application No.: US13054577Application Date: 2009-07-02
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Publication No.: US08625327B2Publication Date: 2014-01-07
- Inventor: Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Oshima , Nobuyuki Ishiwata
- Applicant: Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Oshima , Nobuyuki Ishiwata
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2008-183703 20080715
- International Application: PCT/JP2009/062083 WO 20090702
- International Announcement: WO2010/007893 WO 20100121
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A domain wall motion type MRAM has: a magnetic recording layer 10 being a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminals 14a and 14b connected to the magnetic recording layer 10 for supplying a current to the magnetic recording layer 10; and an anti-ferromagnetic layer 45 being in contact with a first region R1 of the magnetic recording layer 10. The first region R1 includes a part of a current supply region RA of the magnetic recording layer 10 that is between the pair of current supply terminals 14a and 14b.
Public/Granted literature
- US20110116306A1 MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME Public/Granted day:2011-05-19
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