Invention Grant
- Patent Title: Nonvolatile memory apparatus and write control method thereof
- Patent Title (中): 非易失性存储装置及其写入控制方法
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Application No.: US13331196Application Date: 2011-12-20
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Publication No.: US08625330B2Publication Date: 2014-01-07
- Inventor: Kyu Sung Kim
- Applicant: Kyu Sung Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0107630 20111020
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A nonvolatile memory apparatus includes a memory cell array, and a write operation controller configured to verify a write operation by comparing input data of the write operation controller to cell data written into the memory cell array, measure a resistance value after a first time is elapsed, and determine whether or not to re-perform the write operation according to the measured resistance value.
Public/Granted literature
- US20130103883A1 NONVOLATILE MEMORY APPARATUS AND WRITE CONTROL METHOD THEREOF Public/Granted day:2013-04-25
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