Invention Grant
US08625331B1 Methods of programming and erasing programmable metallization cells (PMCs)
有权
编程和擦除可编程金属化电池(PMC)的方法
- Patent Title: Methods of programming and erasing programmable metallization cells (PMCs)
- Patent Title (中): 编程和擦除可编程金属化电池(PMC)的方法
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Application No.: US13545792Application Date: 2012-07-10
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Publication No.: US08625331B1Publication Date: 2014-01-07
- Inventor: Shane Charles Hollmer , Nad Edward Gilbert
- Applicant: Shane Charles Hollmer , Nad Edward Gilbert
- Applicant Address: US CA Sunnyvale
- Assignee: Adesto Technologies Corporation
- Current Assignee: Adesto Technologies Corporation
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/34

Abstract:
An integrated circuit can include a plurality of programmable metallization cells (PMCs) in a memory array, each PMC comprising an ion conducting material, an active metal dissolvable in the ion conducting material, and two electrodes, a first electrode of at least one PMC being coupled to a program node; and a plurality of program and verify circuits, each including a current source section to enable at least one current path between the program node and a power supply node in a program and verify operation, and a verify signal generator circuit comprising at least a first comparator having a first input coupled to the program node, a second input coupled to receive a first reference voltage, and a comparator output to provide a verify signal that indicates a program operation is complete.
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