A memory device includes a memory array comprising a plurality of memory cells. At least a given one of the memory cells comprises a pair of cross-coupled inverters and associated write assist circuitry. The write assist circuitry comprises first switching circuitry coupled between a supply node of a device of the first inverter and a supply node of the memory cell, and second switching circuitry coupled between a supply node of a device of the second inverter and the supply node of the memory cell. The first and second switching circuitry are separately controlled, with the first switching circuitry being controlled using a wordline and an uncomplemented bitline of the memory device, and the second switching circuitry being controlled using the wordline and a complemented bitline of the memory device.