Invention Grant
- Patent Title: Magnetic storage element, magnetic storage device, and magnetic memory
- Patent Title (中): 磁存储元件,磁存储器件和磁存储器
-
Application No.: US13238198Application Date: 2011-09-21
-
Publication No.: US08625335B2Publication Date: 2014-01-07
- Inventor: Hirofumi Morise , Hideaki Fukuzawa , Akira Kikitsu , Yoshiaki Fukuzumi
- Applicant: Hirofumi Morise , Hideaki Fukuzawa , Akira Kikitsu , Yoshiaki Fukuzumi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2011-70884 20110328
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
A magnetic storage element according to an embodiment includes: a magnetic thin wire extending in a first direction and having a plurality of magnetic domains partitioned by domain walls; an electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire.
Public/Granted literature
- US20120250398A1 MAGNETIC STORAGE ELEMENT, MAGNETIC STORAGE DEVICE, AND MAGNETIC MEMORY Public/Granted day:2012-10-04
Information query