Invention Grant
- Patent Title: Multi-cell per memory-bit circuit and method
- Patent Title (中): 多单元每个存储器位电路和方法
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Application No.: US13083854Application Date: 2011-04-11
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Publication No.: US08625339B2Publication Date: 2014-01-07
- Inventor: Adrian E. Ong
- Applicant: Adrian E. Ong
- Applicant Address: US CA Milpitas
- Assignee: Grandis, Inc.
- Current Assignee: Grandis, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Renaissance IP Law Group LLP
- Main IPC: G11C11/14
- IPC: G11C11/14

Abstract:
A write circuit is adapted to provide a same logical bit to each of a multitude of memory cells for storage. Each of the multitude of memory cells stores either the bit or a complement of the bit in response to the write circuit. A read circuit is adapted to receive the bits stored in the multitude of memory cells and to generate an output value defined by the stored bits in accordance with a predefined rule. The predefined rule may be characterized by a statistical mode of the bits stored in the plurality of memory cells. Storage errors in a minority of the multitude of memory cells may be ignored at the cost of lower memory density. The predefined rule may be characterized by a first weight assigned to bits 1 and a second weight assigned to bits 0.
Public/Granted literature
- US20120257448A1 Multi-Cell Per Memory-Bit Circuit and Method Public/Granted day:2012-10-11
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