Invention Grant
US08625340B1 Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them
有权
场诱导MRAM中写入线的磁性侧壁及其制造方法
- Patent Title: Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them
- Patent Title (中): 场诱导MRAM中写入线的磁性侧壁及其制造方法
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Application No.: US13340452Application Date: 2011-12-29
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Publication No.: US08625340B1Publication Date: 2014-01-07
- Inventor: Krishnakumar Mani
- Applicant: Krishnakumar Mani
- Applicant Address: US CA Santa Clara
- Assignee: Magsil Corporation
- Current Assignee: Magsil Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Hahn & Moodley LLP
- Agent Vani Moodley, Esq.
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.
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