Invention Grant
US08625341B2 Array structural design of Magnetoresistive Random Access Memory (MRAM) bit cells
有权
磁阻随机存取存储器（MRAM）位单元的阵列结构设计
- Patent Title: Array structural design of Magnetoresistive Random Access Memory (MRAM) bit cells
- Patent Title (中): 磁阻随机存取存储器（MRAM）位单元的阵列结构设计
-
Application No.: US13448652Application Date: 2012-04-17
-
Publication No.: US08625341B2Publication Date: 2014-01-07
- Inventor: William H. Xia
- Applicant: William H. Xia
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cells are disclosed. The bit cells include a source line formed in a first plane and a bit line formed in a second plane. The bit line has a longitudinal axis that is parallel to a longitudinal axis of the source line, and the source line overlaps at least a portion of the bit line.
Public/Granted literature
- US20130100732A1 Array Structural Design of Magnetoresistive Random Access Memory (MRAM) Bit Cells Public/Granted day:2013-04-25
Information query
