Invention Grant
- Patent Title: Memory device and control method of memory device
- Patent Title (中): 存储器件的存储器件和控制方法
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Application No.: US13597444Application Date: 2012-08-29
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Publication No.: US08625347B2Publication Date: 2014-01-07
- Inventor: Kenji Sakurada
- Applicant: Kenji Sakurada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-207701 20110922
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A memory card includes: a plurality of memory cells; a CPU core; and an ECC unit configured to perform soft decision decoding. If decoding based on an LLR acquired from a first LLR table fails, the memory card measures a threshold voltage distribution centered on a first HB read voltage with a highest voltage. If a first shift value as a difference between a least frequent voltage of the threshold voltage distribution and the first HB read voltage is “negative”, the memory card performs decoding based on an LLR acquired from the second LLR table. If the first shift value is “positive”, the memory card performs decoding based on an LLR acquired from a third LLR table.
Public/Granted literature
- US20130077400A1 MEMORY DEVICE AND CONTROL METHOD OF MEMORY DEVICE Public/Granted day:2013-03-28
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