Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13100906Application Date: 2011-05-04
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Publication No.: US08625363B2Publication Date: 2014-01-07
- Inventor: Young-Jun Ku , Ki-Ho Kim
- Applicant: Young-Jun Ku , Ki-Ho Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0017804 20110228
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/00 ; G11C8/00

Abstract:
A semiconductor memory device includes a read circuit configured to sequentially output a plurality of compressed data corresponding to all banks which are to be tested in response to a plurality of bank addresses and a read enable signal during a test mode and a pad configured to transfer the compressed data which are sequentially outputted from the read circuit to an outside of the semiconductor memory device.
Public/Granted literature
- US20120218838A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-08-30
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