Invention Grant
- Patent Title: Semiconductor memory device and method of operation the same
- Patent Title (中): 半导体存储器件及其操作方法相同
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Application No.: US13286595Application Date: 2011-11-01
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Publication No.: US08625376B2Publication Date: 2014-01-07
- Inventor: Min Joong Jung , Wan Seob Lee
- Applicant: Wan Seob Lee , Jung Mi Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0108149 20101102
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10

Abstract:
A semiconductor memory device includes a first plane and a second plane each configured to include a plurality of memory cells, and a data transfer circuit configured to transfer first data, stored in the memory cells of the first plane, to the second plane and transfer second data, stored in the memory cells of the second plane, to the first plane when a copyback operation is performed and to transfer the first data or the second data to an I/O circuit when a read operation is performed.
Public/Granted literature
- US20120281488A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATION THE SAME Public/Granted day:2012-11-08
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