Invention Grant
- Patent Title: Nonvolatile semiconductor memory
- Patent Title (中): 非易失性半导体存储器
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Application No.: US13459724Application Date: 2012-04-30
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Publication No.: US08625378B2Publication Date: 2014-01-07
- Inventor: Koichi Fukuda
- Applicant: Koichi Fukuda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-103659 20110506
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A nonvolatile semiconductor memory includes a first power supply voltage pad to which a first power supply voltage required for a writing, reading or erasing operation of the memory cells is applied. The nonvolatile semiconductor memory includes a second power supply voltage pad to which a second power supply voltage that is lower than the first power supply voltage and to be supplied to the I/O circuit is applied. The nonvolatile semiconductor memory includes a first voltage down-converting circuit that converts the first power supply voltage down to a first down-converted voltage that is higher than the second power supply voltage. The nonvolatile semiconductor memory includes a second voltage down-converting circuit that converts the second power supply voltage down to a second down-converted voltage that is lower than the first down-converted voltage.
Public/Granted literature
- US20120281470A1 NONVOLATILE SEMICONDUCTOR MEMORY Public/Granted day:2012-11-08
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