Invention Grant
- Patent Title: Internal voltage generating circuit of phase change random access memory device and method thereof
- Patent Title (中): 相变随机存取存储器件的内部电压产生电路及其方法
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Application No.: US13713862Application Date: 2012-12-13
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Publication No.: US08625380B2Publication Date: 2014-01-07
- Inventor: Yoon-Jae Shin
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0134941 20081226
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
An internal voltage generating circuit includes a divided voltage generator configured to generate a divided voltage by dividing a feedback internal voltage level at a division ratio corresponding to an operation mode control signal, a voltage detector configured to detect a level of the divided voltage based on a reference voltage level, an internal voltage generator configured to receive a supply voltage as power source and generate the internal voltage in response to an output signal of the voltage detector, and an under-driving unit configured to under-drive an internal voltage terminal to a supply voltage in an under-driving operation region that is determined in response to the operation mode control signal.
Public/Granted literature
- US20130121069A1 INTERNAL VOLTAGE GENERATING CIRCUIT OF PHASE CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD THEREOF Public/Granted day:2013-05-16
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