Invention Grant
US08625380B2 Internal voltage generating circuit of phase change random access memory device and method thereof 有权
相变随机存取存储器件的内部电压产生电路及其方法

  • Patent Title: Internal voltage generating circuit of phase change random access memory device and method thereof
  • Patent Title (中): 相变随机存取存储器件的内部电压产生电路及其方法
  • Application No.: US13713862
    Application Date: 2012-12-13
  • Publication No.: US08625380B2
    Publication Date: 2014-01-07
  • Inventor: Yoon-Jae Shin
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2008-0134941 20081226
  • Main IPC: G11C5/14
  • IPC: G11C5/14
Internal voltage generating circuit of phase change random access memory device and method thereof
Abstract:
An internal voltage generating circuit includes a divided voltage generator configured to generate a divided voltage by dividing a feedback internal voltage level at a division ratio corresponding to an operation mode control signal, a voltage detector configured to detect a level of the divided voltage based on a reference voltage level, an internal voltage generator configured to receive a supply voltage as power source and generate the internal voltage in response to an output signal of the voltage detector, and an under-driving unit configured to under-drive an internal voltage terminal to a supply voltage in an under-driving operation region that is determined in response to the operation mode control signal.
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