Invention Grant
- Patent Title: Stacked semiconductor device
- Patent Title (中): 堆叠半导体器件
-
Application No.: US13026460Application Date: 2011-02-14
-
Publication No.: US08625381B2Publication Date: 2014-01-07
- Inventor: Ho-Cheol Lee
- Applicant: Ho-Cheol Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0038583 20100426
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C5/02 ; H01L23/02 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/00 ; G11C8/02 ; G11C8/12 ; G11C8/10

Abstract:
Provided is a stacked semiconductor device including n stacked chips. Each chip includes “j” corresponding upper and lower electrodes, wherein j is a minimal natural number greater than or equal to n/2, and an identification code generator including a single inverter connecting one of the j first upper electrode to a corresponding one of the j lower electrodes. The upper electrodes receive a previous identification code, rotate the previous identification code by a unit of 1 bit, and invert 1 bit of the rotated previous identification code to generate a current identification code. The current identification code is applied through the j lower electrodes and corresponding TSVs to communicate the current identification code to the upper adjacent chip.
Public/Granted literature
- US20110260331A1 STACKED SEMICONDUCTOR DEVICE Public/Granted day:2011-10-27
Information query